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Conference Proceedings

1. Li-Defect Reactions During Low Dose Ion Implantation of 8Li Into ZnSe Single Crystals

Restle, M. ; Dalmer, M. ; Wahl, U. ; Hofsass, H.

Pub. info.:	Microstructural processes in irradiated materials : symposium held November 30-December 2, 1998, Boston, Massachusetts, U.S.A.. pp.49-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	540

Conference Proceedings

2. Behavior of the Potential n-Type Dopants P and As in Diamond After Low-Dose Ion Implantation

Hofsass, H. ; Dalmer, M. ; Restle, M. ; Ronning, C. ; Bharuth-Ram, K. ; Quintel, H. ; The Isolde-Collaboration

Pub. info.:	Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.675-, 1997. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	442

Conference Proceedings

3. Recovery of Structural Defects in GaN After Heavy Ion Implantation

Ronning, C. ; Dalmer, M. ; Deicher, M. ; Restle, M. ; Bremser, M. D. ; Davis, R. F. ; Hofsass, H.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.407-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

4. Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaN

Dalmer, M. ; Restle, M. ; Stotzler, A. ; Vetter, U. ; Hofsass, H. ; Bremser, M. D. ; Ronning, C. ; Davis, R. F. ; The Isolde Collaboration,

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1021-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482