1.

Conference Proceedings
Conference Proceedings
1. Channel Length Influence on the Performance of Source-Follower Buffers Implemented with Graded-Channel SOI nMOSFETs
M. De Souza ; D. Flandre ; M.A. Pavanello
Pub. info.: Microelectonics Technology and Devices - SBMicro 2008.  pp.263-272,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 14(1)
2.

Conference Proceedings
Conference Proceedings
2. Linearity Analysis in Double Gate Graded-Channel Soi Devices Applied to 2-Mos Mosfet-C Balanced Structures
R.T. Doria ; A. Cerdeira ; J.-P. Raskin ; D. Flandre ; M.A. Pavanello
Pub. info.: Microelectonics Technology and Devices - SBMicro 2008.  pp.273-282,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 14(1)
3.

Conference Proceedings
Conference Proceedings
3. Application of Double Gate Graded-Channel SOI in MOSFET-C Balanced Structures
R. T. Doria ; M. A. Pavanello ; A. Cerdeira ; J. Raskin ; D. Flandre
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.217-224,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
4.

Conference Proceedings
Conference Proceedings
4. Operation of Double Gate Graded-Channel Transistors at Low Temperatures
M. A. Pavanello ; J. A. Martino ; T. M. Chung ; A. Kranti ; J.-P. Raskin ; D. Flandre
Pub. info.: Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices.  pp.50-60,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-27
5.

Conference Proceedings
Conference Proceedings
5. The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices
P.M. Gammon ; F. Li ; C.W. Chan ; A.M. Sanchez ; S.A. Hindmarsh ; F. Gity ; T. Trajkovic ; V. Kilchytska ; V. Pathirana ; G. Camuso ; K. Ben Ali ; D. Flandre ; P.A. Mawby ; J.W. Gardner
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.747-750,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
6.

Conference Proceedings
Conference Proceedings
6. Impact of Graded-Channel SOI MOSFET Application on the Performance of Cascode and Wilson Current Mirrors
A. A. Santos ; D. Flandre ; M. A. Pavanello
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.441-450,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)
7.

Conference Proceedings
Conference Proceedings
7. Analysis of Matching in Graded-Channel SOI MOSFETs
M. de Souza ; D. Flandre ; M. A. Pavanello
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.323-332,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)
8.

Conference Proceedings
Conference Proceedings
8. The Length-Dependence of the 1/f Noise of Graded-Channel SOI nMOSFETs
E. Simoen ; C. Claeys ; T. M. Chung ; D. Flandre ; J. Raskin
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.373-382,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)
9.

Conference Proceedings
Conference Proceedings
9. Improved Charge Sheet Model for PD SOI Sub-Micron MOSFETs
J. Alvarado ; A. Cerdeira ; V. Kilchytska ; D. Flandre
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.451-460,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)