1.

Conference Proceedings
Conference Proceedings
1. Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress
M. Adi Negara ; K. Cherkaoui ; P. Majhi ; W. Tsai ; D. Bauza
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.639-644,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. New Features of the SILC in MOSFETs with Ultrathin Oxides
D. Bauza ; G. Ghibaudo ; F. Lime ; F. Rahmoune
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.209-220,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
3.

Conference Proceedings
Conference Proceedings
3. On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics
D. Bauza ; O. Ghobar ; B. Guillaumot
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.219-228,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
4.

Conference Proceedings
Conference Proceedings
4. Further Advances in the Electrical Charaterisation of Silicon-Insulator Interface Traps using Charge Pumping
D. Bauza ; S. Bayon ; O. Ghobar
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.3-26,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)