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31 results

Conference Proceedings

1. The effects of parasitic bipolar-junction-transistor (BJT) conduction on the hot-carrier-degradation of PD SOI MOSFETs

Chang, Y.S. ; Li, S.S. ; Cristoloveanu, S.

Pub. info.:	Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices. pp.319-328, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-23

Conference Proceedings

2. Saturation current model for the n-channel G4-FET

Dufrene, B. ; Blalock, B. ; Cristoloveanu, S. ; Mojarradi, M. ; Kolawa, E.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.367-372, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

3. Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films

Pretet, J. ; Ohata, A. ; Dieudonne, F. ; Allibert, F. ; Bresson, N. ; Matsumoto, T. ; Poiroux, T. ; Jomaah, J. ; Cristoloveanu, S.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.476-487, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

4. INVITED: ELECTRONIC DIVISIONAWARD ADDRESS: SOI TECHNOLOGY: THE FUTURE WILL NOT SCALE DOWN

Cristoloveanu, S.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.328-341, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

5. Influence of the annealing duration on the interface roughness and electrical properties of low-dose SIMOX wafers

Munteanu, D. ; Guilhalmenc, C. ; Cristoloveanu, S. ; Moriceau, H. ; Cartier, A.M. ; Aspar, B.

Pub. info.:	Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices. pp.131-136, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-23

Conference Proceedings

6. Influence of the Back Gate Bias on the Properties of SOI LDMOSFETs

Vandooren, A. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.151-156, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

7. Evaluation and Comparison of Various Silicon-On-Sapphire (SOS) Materials using the Pseudo-MOSFET Technique

Hefyene, N. ; Cristoloveanu, S. ; Ghibaudo, G. ; Matsui, M. ; Yasujima, A.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.133-138, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

8. Special Frequency-Dependent Transient Mechanisms in SO1 MOSFETs Measured by a New Technique: The Average Transient Current

Ernst, T. ; Lakeou, S. ; Allibert, F. ; Pretet, J. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.175-180, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

Conference Proceedings

9. Channel Width, Length and Thickness Effects in LOCOS-Isolated SOT MOSFETs

Pretet, I. ; Cristoloveanu, S. ; Alliben, F. ; Zaslavsky, A. ; Raynaud, C.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.221-226, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

10.

Conference Proceedings

10. Performance of Double-Gate SOI nMOSFETs at Low Temperature

Vandooren, A. ; Cristoloveanu, S. ; Colinge, J.P. ; Flandre, D.

Pub. info.:	Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium. pp.427-432, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-3

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