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31 results

Conference Proceedings

1. Characterization and modeling of advanced SOI materials and devices

Allibert, F. ; Pretet, J. ; Ernst, T. ; Jomaah, J. ; Cristoloveanu, S.

Pub. info.:	Progress in SOI structures and devices operating at extreme conditions. pp.239-248, 2002. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	58

Conference Proceedings

2. Review of radiation effects in single- and multiple-gate SOI MOSFETs

Cristoloveanu, S.

Pub. info.:	Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment. pp.197-214, 2005. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	185

Conference Proceedings

3. Introductory Remarks

Cristoloveanu, S.

Pub. info.:	Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices. pp.261-262, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-11

Conference Proceedings

4. Electrical characterization of the interface between buried oxide and silicon substrate

Dimitrakis, P. ; Papaioannou, G.J. ; Cristoloveanu, S.

Pub. info.:	Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices. pp.230-235, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-11

Conference Proceedings

5. INVITED: ELECTRONIC DIVISIONAWARD ADDRESS: SOI TECHNOLOGY: THE FUTURE WILL NOT SCALE DOWN

Cristoloveanu, S.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.328-341, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

6. The effects of parasitic bipolar-junction-transistor (BJT) conduction on the hot-carrier-degradation of PD SOI MOSFETs

Chang, Y.S. ; Li, S.S. ; Cristoloveanu, S.

Pub. info.:	Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices. pp.319-328, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-23

Conference Proceedings

7. Influence of the annealing duration on the interface roughness and electrical properties of low-dose SIMOX wafers

Munteanu, D. ; Guilhalmenc, C. ; Cristoloveanu, S. ; Moriceau, H. ; Cartier, A.M. ; Aspar, B.

Pub. info.:	Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices. pp.131-136, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-23

Conference Proceedings

8. Adaptation of Ψ-MOSFET techniques for ultra thin SOI

Bresson, N. ; Allibert, F. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.317-324, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

Conference Proceedings

9. Effects of etching processes on the properties of pseudo-MOSFETs for the UTSOI characterization

Bae, Y.-H. ; Kwon, K.-W. ; Lee, J.-H. ; Woo, H.-J. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.295-300, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

10.

Conference Proceedings

10. Short-channel, narrow channel, and ultra-thin oxide effects in advanced SOI MOSFETs

Zaouia, S. ; Goktepeli, S. ; Perera, A.H. ; Cristoloveanu, S.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.309-316, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

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