1.

Conference Proceedings
Conference Proceedings
1. MULTI-WAFER ATOMIC LAYER EPITAXY REACTOR FOR DEVICE QUALITY GaAs
Colter, P. C. ; Hussein, S. A. ; Dip, A. ; Erdogan, M. U. ; Bedair, S. M.
Pub. info.: Atomic layer growth and processing : symposium held April 29 - May 1, 1991, Anaheim, California, U.S.A..  pp.157-162,  1991.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 222
2.

Conference Proceedings
Conference Proceedings
2. MOCVD GROWTH OF CdTe AND HgTe ON GaAs IN A VERTICAL, HIGH SPEED, ROTATING-DISCREATOR
Tompa, G. S. ; Nelson, C. R. ; Reinert, P. D. ; Saracino, M. A. ; Terrill, L. A. ; Colter, P. C.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.447-454,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
3.

Conference Proceedings
Conference Proceedings
3. TEM Study of Interfaces and Defects in MOCVD-Grown GaN on SiC on SIMOX
Zhou, W. L. ; Pirouz, P. ; Namavar, F. ; Colter, P. C. ; Yoganathan, M. ; Leksono, M. W. ; Pankove, J. I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.471-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Low-Temperature ECR-Plasma Assisted MOCVD Microcrystalline and Amorphous GaN Deposition and Characterization for Electronic Devices
Hassan, Z. ; Kordesch, M. E. ; Jadwisienzak, W. M. ; Lozykowski, H. J. ; Halverson, W. ; Colter, P. C.
Pub. info.: Microcrystalline and nanocrystalline semiconductors--1998 : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.245-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 536