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17 results

Conference Proceedings

1. The Effects of Hydrogen Profiling and of Light-Induced Degradation OD the Electronic Properties of Hydrogenated Nanocrystalline Silicon

Halverson, A.F. ; Gutierrez, J.J. ; Cohen, J.D. ; Yan, Baojie ; Yang, Jeffrey ; Guha, Subhendu

Pub. info.:	Amorphous and nanocrystalline silicon science and technology - 2005 : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.. pp.481-486, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	862

Conference Proceedings

2. Characterization of Deep Defects in CuIn 1-xGa xSe 2 (CIGS) Working Photovoltaic Devices

Heath, J.T. ; Cohen, J.D. ; Shafarman, W.N. ; Johnson, D.C.

Pub. info.:	Photovoltaics for the 21st century II : proceedings of the international symposium. pp.324-332, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-10

Conference Proceedings

3. LATTICE RELAXATION OF DEEP DEFECTS IN LIGHT-SOAKED N-TYPE HYDROGENATED AMORPHOUS SILICON

Leen, T.M. ; Cohen, J.D.

Pub. info.:	Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.. pp.39-44, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	219

Conference Proceedings

4. CHARGE-DEFECT THERMODYNAMIC EQUILIBRIUM AND METASTABLE DEFECTS IN AMORPHOUS SILICON

Fortmann, C.M. ; Cohen, J.D.

Pub. info.:	Amorphous silicon technology, 1992. pp.383-388, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	258

Conference Proceedings

5. CAPACITANCE STUDIES OF METASTABLE DEFECT CREATION IN HYDROGENATED AMORPHOUS SILICON

Cohen, J.D. ; Mahavadi, K. ; Zellaman, K. ; Harbison, J.P. ; Delahoy, A.E.

Pub. info.:	Materials issues in amorphous-semiconductor technology : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.. pp.213-224, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	70

Conference Proceedings

6. CONFIGURATIONAL RELAXATION OF THE D DEFECT IN HYDROGENATED AMORPHOUS SILICON AS A FUNCTION OF FERMI ENERGY

Leen, T.M. ; Rasmussen, R.J. ; Cohen, J.D.

Pub. info.:	Amorphous silicon technology, 1992. pp.211-216, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	258

Conference Proceedings

7. EFFECT OF LIGHT-SOAKING ON THE DENSITY OF STATES AND CARRIER DYNAMICS OF a-Si1-XGeX:H ALLOYS

Unold, T. ; Cohen, J.D. ; Fortmann, C.M.

Pub. info.:	Amorphous silicon technology, 1992. pp.499-504, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	258

Conference Proceedings

8. EFFECTS OF SUBSTRATE PARAMETERS ON AMORPHOUS- CRYSTALLINE SILICON INTERFACE

Vetrella, U.B. ; Cohen, J.D.

Pub. info.:	Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.. pp.819-824, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	219

Conference Proceedings

9. AN ASSESSMENT OF THE LIGHT MODULATED PHOTOCURRENT METHOD IN THE STUDY OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS SILICON

Zhong, F. ; Cohen, J.D.

Pub. info.:	Amorphous silicon technology, 1992. pp.813-818, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	258

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Conference Proceedings

10. CAPACITANCE STUDIES OF LIGHT-INDUCED EFFECTS IN UNDOPED HYDROGENATED AMORPHOUS SILICON

Zellama, K. ; Cohen, J.D. ; Harbison J.P.

Pub. info.:	Materials issues in applications of amorphous silicon technology : symposium held April 15-17, 1985, San Francisco, California, U.S.A.. pp.311-316, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	49

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