1.

Conference Proceedings
Conference Proceedings
1. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures:Correlation with Structural Properties
Holst,J. ; M.Straｦﾂburg ; Ledentsov,N.N. ; Eckey,L. ; Goldner,A. ; Hoffmann,A. ; Hempel,T. ; Rudloff,D. ; Bertram,F. ; Christen,J. ; Sakharov,A.V. ; Maximov,M.V. ; Usikov,A.S. ; Lundin,W.V. ; Alferov,Z.I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1291-1294,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Optical Admittance Spectroscopy of Deep Centers in Galliunrnitride-Correlation with Photoluminescence
Krtschil,A. ; Fischer,P. ; Witte,H. ; Lisker,M. ; Christen,J. ; Birkle,U. ; Einfeldt,S. ; Hommel,D.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1381-1384,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs,AlAs/GaAs,and AIN Buffer Layers
Strittmatter,A. ; Krost,A. ; Schatke,K. ; Bimberg,D. ; Blasing,J. ; Christen,J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1145-1148,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268