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13 results

Conference Proceedings

1. Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si

Choyke,W.J. ; Powell,J.A. ; Cheng,T.T. ; Pirouz,P.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part3 pp.1433-1438, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

2. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

Gotz,W. ; Schoner,A. ; Pensl,G. ; Suttrop,W. ; Choyke,W.J. ; Stein,R. ; Leibenzeder,S.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.495-500, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

3. Time Resolved PL Study of Multi Bound Excitons in 3C SiC

Bergman,J.P. ; Janzen,E. ; Sridhara,S.G. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.485-488, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla

Rutsch,G. ; Devaty,R.P. ; Langer,D.W. ; Rowland,L.B. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.517-520, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. Oxygen-Related Defect Centers in 4H Silicon Carbide

Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.553-556, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Dn Revisited in an Modern Guise-6H and 4H SiC

Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Dalibor,T. ; Pensl,G. ; Kimoto,T.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.493-496, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Ground States of the Ionized Isoelectronic Ti Acceptor in SiC

Dalibor,T. ; Pensl,G. ; Nordeil,N. ; Schdner,A. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.537-540, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Nitrogen Donors,Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide(4H-SiC)

Gotz,W. ; Schoner,A. ; Suttrop,W. ; Pensl,G. ; Choyke,W.J. ; Stein,R.A. ; Leibenzeder,S.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.69-74, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. ODMR studies of As-grown and electron-irradiated GaN and AlN

Watkins,G.D. ; Linde,M. ; Mason,P.W. ; Przybylinska,H. ; C.B0zdog ; Ufiring,S.J. ; Harle,V. ; Scholz,F. ; Choyke,W.J. ; Slack,G.A.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1087-1092, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

10.

Conference Proceedings

10. Nanometer-Scale Investigation of Schottky Conrtacts and Conduction Band Structure on 4H-,6H- and 15R-SiC Using Ballistie Electron Emission Microscopy

Im,H.-J. ; Kaczer,B. ; Pelz,J.P. ; Chen,S. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.813-816, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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Author: Choyke,W.J.