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38 results

Conference Proceedings

1. Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

Huang, W. ; Khan, T. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1525-1528, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Studies on Selective Growth and In Situ Etchitlg of 4H-SiC Using a TaC Mask

Li, C.H. ; Bhat, I.B. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.259-262, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Overlapping Shockley/Frank Faults in 4F-SiC PiN Diodes

Twigg, M.E. ; Stahlbush, R.E. ; Losee, P.A. ; Li, C.H. ; Bhat, I.B. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.383-386, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Dependence of the Ionization Energy of Phosphorus Donor in 4H-SiC on Doping Concentration

Rao, S. ; Chow, T.P. ; Bhat, I.B.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.597-600, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

Losee, P.A. ; Li, C.H. ; Kumar, R.J. ; Chow, T.P. ; Bhat, I.B. ; Gutmann, R.J. ; Stahlbush, R.E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1363-1366, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Optimization of the Specific On-Resistance of 4H-SiC BJTs

Balachandran, S. ; Chow, T.P. ; Agarwal, A.K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1429-1432, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

Zhu, L. ; Losee, P.A. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Ervin, M.H. ; Shah, P.B. ; Derenge, M.A. ; Vispute, R.D. ; Venkatesan, T. ; Agarwal, A.K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1367-1370, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

8. Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors

Balachandran, S. ; Chow, T.P. ; Agarwal, A.K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1433-1436, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

9. Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers

Zhu, L. ; Chow, T.P. ; Jones, K.A. ; Scozzie, C.J. ; Agarwal, A.K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1159-1162, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

10.

Conference Proceedings

10. Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier

Zhu, L. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1401-1404, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

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Author: Chow, T.P.