1.

Conference Proceedings
Conference Proceedings
1. * ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters
Osinsky, A. V. ; Dong, JianWei ; Xie, J. Q. ; Hertog, B. ; Dabiran, A. M. ; Chow, P. P. ; Pearton, S. J. ; Norton, D. P. ; Look, D. C. ; Schoenfeld, W. ; Lopatiuk, O. ; Chernyak, L. ; Cheung, M. ; Cartwright ; Gerhold, M.
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.371-380,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
2.

Conference Proceedings
Conference Proceedings
2. Electron Injection-Induced Effects in III-Nitrides*
Chernyak, L.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.178-183,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
3.

Conference Proceedings
Conference Proceedings
3. * ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters
Osinsky, A. V. ; Dong, Jianwei W. ; Xie, J. Q. ; Hertog, B. ; Dabiran, A. M. ; Chow, P. P. ; Pearton, S. J. ; Norton, D. P. ; Look, D. C. ; Schoenfeld, W. ; Lopatiuk, O. ; Chernyak, L. ; Cheung, M. ; Cartwright ; Gerhold, M.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.429-438,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
4.

Conference Proceedings
Conference Proceedings
4. Deep UV Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGaN
Temkin, H. ; Nikishin, S. A. ; Holtz, M. ; Chernyak, L.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.3-8,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
5.

Conference Proceedings
Conference Proceedings
5. Studies of Electron Trapping in III-Nitrides
Chernyak, L. ; Burdett, W. ; Lopatiuk, O. ; Eickhoff, M.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.512-521,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
6.

Conference Proceedings
Conference Proceedings
6. Studies of electron trapping in III-nitride semiconductors (Invited Paper) [6121-18]
Lopatiuk, O. ; Osinsky, A. ; Chernyak, L.
Pub. info.: Gallium Nitride Materials and Devices.  pp.61210H-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121