1.

Conference Proceedings
Conference Proceedings
1. Thermal Stress as the Major Factor of Defect Generation in SiC During PVT Growth
Cherednichenko, D.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Deng, X. ; Sudarshan, T.S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.131-136,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
2.

Conference Proceedings
Conference Proceedings
2. Influence of the Crystal Thickness on the SiC PVT Growth Rate
Cherednichenko, D.I. ; Khlebnikov, Y.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.95-98,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Modification of 6H-SiC Surface Defect Structure during Hydrogen Etching
Bondokov, R.T. ; Tipirneni, N. ; Cherednichenko, D.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.431-436,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Drachev, R.V. ; Cherednichenko, D.I. ; Khlebnikov, I.I. ; Khlebnikov, Y.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.99-102,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Influence of the Crystal Thickness on the SiC PVT Growth Rate
Cherednichenko, D.I. ; Khlebnikov, Y.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.95-98,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393