Search records | 東京工業大学附属図書館文献データベース

Sort order

3 results

Conference Proceedings

1. A P-Channel MOSFET on 4H-SiC

Han, J.S. ; Cheong, K.Y. ; Dimitrijev, S. ; Laube, M. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1401-1404, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

2. Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC

Cheong, K.Y. ; Dimitrijev, S. ; Han, J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1365-1368, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

3. Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

Afanas'ev, V.V. ; Campbell, S.A. ; Cheong, K.Y. ; Ciobanu, F. ; Dimitrijev, S. ; Pensl, G. ; Stesmans, A. ; Zhong, L.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1361-1364, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460