1.

Conference Proceedings
Conference Proceedings
1. IMPLANTED IMPURITY INCORPORATION AND SEGREGATION PHENOMENA INDUCED BY PEBA IN SILICON
Chaussemy, G. ; Barbier, D. ; Laugier, A.
Pub. info.: Energy beam-solid interactions and transient thermal processing/1984 : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A..  pp.257-264,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 35
2.

Conference Proceedings
Conference Proceedings
2. ARSENIC REDISTRIBUTION AND OUTDIFFUSION IN IMPLANTED CZOCHRALSKI-GROWN P-TYPE SILICON DURING RAPID THERMAL ANNEALING
Chaussemy, G. ; Canut, B. ; Kumar, S. N. ; Barbier, D. ; Laugier, A.
Pub. info.: Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.695-700,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 100
3.

Conference Proceedings
Conference Proceedings
3. ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE
Marrakchi, G. ; Chaussemy, G. ; Laugier, A. ; Guillot, G.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.27-32,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
4.

Conference Proceedings
Conference Proceedings
4. ANGLE RESOLVED XPS ANALYSIS OF SURFACE REGION DEFECTS IN RAPID THERMAL ANNEALED ANTIMONY IMPLANTED SILICON
Kumar, S.N. ; Chaussemy, G. ; Laugier, A. ; Canut, B. ; Charbonnier, M.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.927-930,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
5.

Conference Proceedings
Conference Proceedings
5. SPECTROSCOPIC INVESTIGATION OF ARSENIC-INDUCED SURFACE DEFECTS IN HIGH-DOSE As+ IMPLANTED RAPID THERMAL ANNEALED SILICON
Kumar, R. ; Chaussemy, G. ; Roura, P. ; Laugier, A.
Pub. info.: Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A..  pp.215-220,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 138