1.

Conference Proceedings
Conference Proceedings
1. *MATERIALS AND DEVICE CHARACTERISTICS OF InAlAs/InGaAs HEMTs
Ho, Pin ; Kao, M.Y. ; Chao, P.C. ; Duh, K.H.G. ; Smith, P.M. ; Martin, P.A. ; Liu, S.M.J. ; Hwang, K.C. ; Ballingall, J.M. ; Yu, T. ; Swanson, A.W.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.251-268,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
2.

Conference Proceedings
Conference Proceedings
2. High-Efficiency, Low Voltage Compound Semiconductor Devices for Microwave and MM-Wave Power Amplifiers
Sloan, L. ; Hietala, V. ; Chao, P.C. ; Kong, W.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.201-207,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
3.

Conference Proceedings
Conference Proceedings
3. Low Cost MHEMT MMIC Technology for High Gain, High Efficiency Power Applications
Chao, P.C.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.66-68,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
4.

Conference Proceedings
Conference Proceedings
4. *MATERIALS AND DEVICE CHARACTERISTICS OF PSEUDOMORPHIC A1GaAS-InGaAs-GaAs AND A1 InAs-InGaAs-InP HIGH ELECTRON MOBILITY TRANSISTORS
Ballingall, J.M. ; Ho, Pin ; Tessmer, G.J. ; Martin, P.A. ; Yu, T.H. ; Chao, P.C. ; Smith, P.M. ; Duh, K.H.G.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.759-770,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
5.

Conference Proceedings
Conference Proceedings
5. Silicon Nitride Passivation for InP Based Devices
Ren, F. ; Buckley, N. ; Lee, K. ; Pearton, S.J. ; Bartynski, R.A. ; Constantine, C. ; Hobson, W.S. ; Chao, P.C.
Pub. info.: Proceedings of the Twenty-first State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXI).  pp.187-196,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-34