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17 results

Conference Proceedings

1. Impact of Indium and Boron Interaction on Short Channel and Reverse Short Channel Effects for NMOSFETs

Ong, S.Y. ; Chor, E.F. ; Lee, J. ; Leung, Y.K. ; See, A. ; Chan, L.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.305-312, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

2. Comparisons of Polisher Designs on the Performance of STI Planarization

Goh, K ; Chen, F ; Balakumar, S. ; Higelin, G. ; See, A. ; Chan, L. ; Lin, C. ; Chern, C.

Pub. info.:	Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium. pp.57-70, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-37

Conference Proceedings

3. 67 High Spatial Resolution Mapping of Strain Induced by the Geometry Configuration in Nanoscaled Devices

Toh, S.L. ; Loh, K.P. ; See, K.S. ; Boothroyd, O.B. ; Li, K. ; Lau, W.S. ; Ang, C.H. ; Chan, L.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.562-568, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

4. Evaluation of 02- and N2- Addition in Via Etching and CHF3/02 Post Etch Treatment

Ho, C.N. ; Higelin, G. ; Low, C.H. ; See, A. ; Chan, L. ; Chua, D.H.C.

Pub. info.:	Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium. pp.269-283, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-30

Conference Proceedings

5. An XPS study of silicon oxynitride rapid thermally grown in nitric oxide

Lai, W. H. ; Li, M. F. ; Pan, J. S. ; Liu, R. ; Chan, L. ; Chua, T. C.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.171-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

Conference Proceedings

6. Characterization of Ni- and Ni(Pt)-sillicide formation on narrow polycrystalline Si lines by raman spectroscopy

Lee, P. S. ; Mangelinck, D. ; Pey, K. L. ; Ding, J. ; Osipowicz, T. ; Ho, C. S. ; Chen, G. L. ; Chan, L.

Pub. info.:	Nondestructive methods for materials characterization : symposium held November 29-30, 1999, Boston, Massachusetts, U.S.A.. pp.269-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	591

Conference Proceedings

7. Real-time IR/EO scene simulator (RISS) product improvements

McKee, D.C. ; Simmons, O.D. ; Makar, R.J. ; Nuwer, M.E. ; Palumbo, P.W. ; Schlossman, P.G. ; Perry, R.C. ; Chan, L.

Pub. info.:	Technologies for synthetic environments: Hardware-in-the-loop testing VIII : 21-22 April 2003, Oriando, Florida, USA. pp.259-267, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5092

Conference Proceedings

8. 66 Suppressed Leakage in Low Temperature RTA (700℃ 30s) Junctions with Buried Epitaxial Si1_yCy

Tan, C. F. ; Lee, H. ; Liu, J. P. ; Quek, E. ; Chan, L. ; Chor, E. F.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.554-561, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

9. 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy

Wong, L.H. ; Wong, C.C. ; Ferraris, C. ; White, T.J. ; Liu, J.P. ; Chan, L. ; Sohn, O.K. ; Hsia, L. C.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.529-534, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

10.

Conference Proceedings

10. Backside Copper Contamination Issues In CMOS Process Integration - A Case Study

Prasad, K. ; Tee, K. ; Chan, L. ; See, A.K.

Pub. info.:	Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A.. pp.D8.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	612

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