1.

Conference Proceedings
Conference Proceedings
1. ACTIVATION UNIFORMITY DEPENDENCE OF UNDOPED SEMI-INSULATING GaAs ON POST-IMPLANT ANNEALING CONDITIONS
Lanzieri, C. ; Graffitti, R. ; Cetronio, A.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.373-378,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. Multiple scanned electron beam annealing of Si implanted GaAs
Bujatti, M. ; Cetronio, A. ; Nipoti, R. ; Olzi, E.
Pub. info.: Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.695-700,  1982.  New York.  North Holland
Title of ser.: Materials Research Society symposia proceedings
Ser. no.: 4
3.

Conference Proceedings
Conference Proceedings
3. RAPID ISOTHERMAL ANNEALING OF Si IMPLANTED SEMI-INSULATING GaAs BY MEANS OF HIGH PREQUENCY INDUCTION HEATING
Cetronio, A. ; Bujatti, M. ; D'Eustacchio, P. ; Ciceroni, S.
Pub. info.: Laser-solid interactions and transient thermal processing of materials : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.641-646,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 13
4.

Conference Proceedings
Conference Proceedings
4. SiC X-Ray Detectors for Spectroscopy and Imaging over a Wide Temperature Range
Bertuccio, G. ; Casiraghi, R. ; Gatti, E. ; Maiocchi, D. ; Nava, F. ; Canali, C. ; Cetronio, A. ; Lanzieri, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.941-944,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436