1.

Conference Proceedings
Conference Proceedings
1. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.273-280,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD
Elshocht, S.Van ; Brijs, B. ; Caymax, M. ; Conard, T. ; Gendt, S.De ; Kubicek, S. ; Meuris, M. ; Onsia, B. ; Richard, O. ; Teerlinck, I. ; Steenbergen, J.Van ; Zhao, C. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.287-292,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.423-430,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
4.

Conference Proceedings
Conference Proceedings
4. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
5.

Conference Proceedings
Conference Proceedings
5. A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers
Vandervorst, W. ; Pawlak, B.J. ; Janssens, T. ; Brijs, B. ; Delhougne, R. ; Caymax, M. ; Loo, R.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.415-422,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
6.

Conference Proceedings
Conference Proceedings
6. The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Kaushik, V. S. ; DeGendt, S. ; Carter, R. ; Claes, M. ; Rohr, E. ; Pantisano, L. ; Kluth, J. ; Kerber, A. ; Cosnier, V. ; Cartier, E. ; Tsai, W. ; Young, E. ; Green, M. ; Chen, J. ; Jang, S-A. ; Lin, S. ; Delabie, A. ; Elshocht, S. V. ; Manabe, Y. ; Richard, O. ; Zhao, C. ; Bender, H. ; Caymax, M. ; Heyns, M.
Pub. info.: Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.145-152,  2003.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 747
7.

Conference Proceedings
Conference Proceedings
7. Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon
Elshocht, S.Van ; Caymax, M. ; Gendt, S.De ; Conard, T. ; Petry, J. ; Claes, M. ; Witters, T. ; Zhao, C. ; Brijs, B. ; Richard, O. ; Bender, H. ; Vandervorst, W. ; Carter, R. ; Kluth, J. ; Date, L. ; Pique, D. ; Heyns, M.M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.197-202,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
8.

Conference Proceedings
Conference Proceedings
8. The Use of Ion Implantation and Annealing for the Fabrication of Strained Silicon on Thin SiGe Virtual Substrates
Buca, D. ; Morschbacher, M.J. ; Hollander, B. ; Luysberg, M. ; Loo, R. ; Caymax, M. ; Mantl, S.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.15-26,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
9.

Conference Proceedings
Conference Proceedings
9. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Loo, R. ; Delhougne, R. ; Meunier-Beillard, P. ; Caymax, M. ; Verheyen, P. ; Eneman, G. ; Wolf, I.De ; Janssens, T. ; Benedetti, A. ; Meyer, K.De ; Vandervorst, W. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.3-14,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
10.

Conference Proceedings
Conference Proceedings
10. The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Kaushik, V.S. ; Gendt, S.De ; Carter, R. ; Claes, M. ; Rohr, E. ; Pantisano, L. ; Kluth, J. ; Kerber, A. ; Cosnier, V. ; Cartier, E. ; Tsai, W. ; Young, E. ; Green, M. ; Chen, J. ; Jang, S-A. ; Lin, S. ; Delabie, A. ; Elshocht, S.V. ; Manabe, Y. ; Richard, O. ; Zhao, C. ; Bender, H. ; Caymax, M. ; Heyns, M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.335-342,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745