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10 results

Conference Proceedings

1. Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxiat Growth on on-axis α-SiC (0001) at Low Temperature

Soueidan, M. ; Ferro, G. ; Cauwet, F. ; Mollet, L. ; Jacquier, C. ; Younes, G. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.271-274, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Jacquier, C. ; Ferro, G. ; Balloud, C. ; Zielinski, M. ; Camassel, J. ; Polychroniadis, E. ; Stoemenos, J. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.735-738, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

3. 3C-SiC Pseudosubstrates for the Growth of Cubic GaN

Aboughe-Nze, P. ; Chassagne, T. ; Chaussende, D. ; Monteil, Y. ; Cauwet, F. ; Bustarret, E. ; Deneuville, A. ; Bentoumi, G. ; Martinez-Guerrerro, E. ; Daudin, B. ; Feuillet, G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1467-1470, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

4. SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC

Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.307-310, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers

Ferro, G. ; Chaussende, D. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.287-290, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?

Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Viala, J.C. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.181-184, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

7. Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers

Ferro, G. ; Chaussende, D. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.287-290, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

Abdou, F. ; Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.245-248, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals

Chaussende, D. ; Jacquier, C. ; Ferro, G. ; Viala, J.C. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.85-90, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

10.

Conference Proceedings

10. SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC

Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.307-310, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Cauwet, F.