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Conference Proceedings

1. 4H-SiC Gate Turn-Off(GTO)Thyristor Development

Casady,J.B. ; Agarwal,A.K. ; Rowland,L.B. ; Siergiej,R.R. ; Seshadri,S. ; Mani,S. ; Barrows,J. ; Piceone,D. ; Sanger,P.A. ; Brandt,C.D.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1069-1072, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. 1400 V 4H-SiC Power MOSFETs

Agarwal,A.K. ; Casady,J.B. ; Rowland,L.B. ; Valek,W.F. ; Brandt,C.D.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.989-992, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268