1.

Conference Proceedings
Conference Proceedings
1. Model-based design improvements for the 100-nm lithography generation
Lucas, K. ; Postnikov, S.V. ; Patterson, K. ; Yuan, C.-M. ; Thomas, C. ; Thompson, M.A. ; Carter, R. ; Litt, L.C. ; Montgomery, P.K. ; Wimmer, K.
Pub. info.: Optical Microlithography XV.  Part One  pp.215-226,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4691
2.

Conference Proceedings
Conference Proceedings
2. 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics
Lander, R. ; Schram, T. ; Lulan, G.S. ; hooker, J. ; Vertommen, J. ; Lee, S. ; de Weerd, W. ; Boullart, W. ; van Elshocht, S ; Carter, R. ; Kubicek, S. ; Demeyer, K. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.367-374,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
3.

Conference Proceedings
Conference Proceedings
3. Qualification of a low-cost high-quality reticle process for 90-nm contact layers
Strozewski, K.J. ; Perez, J. ; Carter, R. ; Kiefer, R. ; Jackson, C. ; MacDonald, S. ; Kalk, F.
Pub. info.: Metrology, Inspection, and Process Control for Microlithography XVIII.  pp.1191-1198,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5375
4.

Conference Proceedings
Conference Proceedings
4. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
5.

Conference Proceedings
Conference Proceedings
5. Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications
Kaushik, V. ; De Gendt, S. ; Caymax, M. ; Young, E. ; Rohr, E. ; Van Elshocht, S. ; Delabie, A. ; Claes, M. ; Shi, X. ; Chen, I. ; Carter, R. ; Conard, T. ; Vandervorst, W. ; Schaekers, M. ; Heyns, M.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.391-396,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
6.

Conference Proceedings
Conference Proceedings
6. The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Kaushik, V. S. ; DeGendt, S. ; Carter, R. ; Claes, M. ; Rohr, E. ; Pantisano, L. ; Kluth, J. ; Kerber, A. ; Cosnier, V. ; Cartier, E. ; Tsai, W. ; Young, E. ; Green, M. ; Chen, J. ; Jang, S-A. ; Lin, S. ; Delabie, A. ; Elshocht, S. V. ; Manabe, Y. ; Richard, O. ; Zhao, C. ; Bender, H. ; Caymax, M. ; Heyns, M.
Pub. info.: Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.145-152,  2003.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 747
7.

Conference Proceedings
Conference Proceedings
7. The Influence of Defects on Compatibility and Yield of the HfO2-PolySilicon Gate Stack for CMOS Integration
Kaushik, V.S. ; Gendt, S.De ; Carter, R. ; Claes, M. ; Rohr, E. ; Pantisano, L. ; Kluth, J. ; Kerber, A. ; Cosnier, V. ; Cartier, E. ; Tsai, W. ; Young, E. ; Green, M. ; Chen, J. ; Jang, S-A. ; Lin, S. ; Delabie, A. ; Elshocht, S.V. ; Manabe, Y. ; Richard, O. ; Zhao, C. ; Bender, H. ; Caymax, M. ; Heyns, M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.335-342,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
8.

Conference Proceedings
Conference Proceedings
8. Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon
Elshocht, S.Van ; Caymax, M. ; Gendt, S.De ; Conard, T. ; Petry, J. ; Claes, M. ; Witters, T. ; Zhao, C. ; Brijs, B. ; Richard, O. ; Bender, H. ; Vandervorst, W. ; Carter, R. ; Kluth, J. ; Date, L. ; Pique, D. ; Heyns, M.M.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.197-202,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745
9.

Conference Proceedings
Conference Proceedings
9. High Temperature Stability of High-K Dielectrics: Thermal Processing and Kinetics
Young, E.W.A. ; Chen, J. ; Cosnier, V. ; Lysagh, P. ; Maes, J.W. ; Roozeboom, F. ; Zhao, C. ; Carter, R. ; Richard, O. ; Conard, T.
Pub. info.: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.125-136,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-11
10.

Conference Proceedings
Conference Proceedings
10. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2