1.

Conference Proceedings
Conference Proceedings
1. Photoluminescence characterization of Mg implanted GaN
Ronning, C. ; Hofsass, H. C. ; Stotzler, A. ; Deicher, M. ; Carlson, E. P. ; Hartlieb, P. J. ; Gehrke, T. ; Rajagopal, P. ; Davis, R. F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.44.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
2.

Conference Proceedings
Conference Proceedings
2. Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
Linthicum, K. J. ; Gehrke, T. ; Thomson, D. B. ; Tracy, K. M. ; Carlson, E. P. ; Smith, T. P. ; Zheleva, T. S. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.9.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Be-Implanted GaN Annealed at High Temperatures
Ronning, C. ; Linthicum, K. J. ; Carlson, E. P. ; Hartlieb, P. J. ; Thomson, D. B. ; Gehrke, T. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.17.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates
Davis, R. F. ; Nam, O-H. ; Zheleva, T. S. ; Bremser, M. D. ; Linthicum, K. J. ; Gehrke, T. ; Rajagopal, P. ; Thomson, D. B. ; Carlson, E. P.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.91-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535
5.

Conference Proceedings
Conference Proceedings
5. Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices
Therrien, R. J. ; Nam, O. H. ; Bremser, M. D. ; Lithicum, K. ; Nimii, H. ; Carlson, E. P. ; Lucovsky, G. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1107-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Ohmic Contact Formation to Doped GaN
Smith, L. L. ; Bremser, M. D. ; Carlson, E. P. ; Weeks, T. W., Jr. ; Huang, Y. ; Kim, M. J. ; Carpenter, R. W. ; Davis, R. F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.861-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
7.

Conference Proceedings
Conference Proceedings
7. Peudeo-EpitaxyTM process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition
Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Preble, E. A. ; Carlson, E. P. ; Robin, B. M. ; Davis, R. F.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1491-1494,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition
Linthicum, K. J. ; Gehrke, T. ; Thomson, D. ; Ronning, C. ; Carlson, E. P. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.307-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572