1.

Conference Proceedings
Conference Proceedings
1. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
Lazar, M. ; Raynaud, C. ; Planson, D. ; Locatelli, M.-L. ; Isoird, K. ; Ottaviani, L. ; Chante, J.P. ; Nipoti, R. ; Poggi, A. ; Cardinali, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.827-830,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
Lazar, M. ; Cardinali, G. ; Raynaud, C. ; Poggi, A. ; Planson, D. ; Nipoti, R. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1025-1028,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460