1.

Conference Proceedings
Conference Proceedings
1. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1437-1440,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs
Agarwal, A.K ; Husna, F. ; Haley, J. ; Bartlow, H. ; McCalpin, B. ; Krishnaswami, S. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1413-1416,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
Agarwal, A.K. ; Krishnaswami, S. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J. ; Geil, B.R ; Katsis, D. ; Scozzie, C.J. ; Stahlbush, R.E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1409-1412,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
Agarwal, A.K. ; Krishnaswami, S. ; Damsky, B. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1397-1400,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
Krishnaswami, S. ; Agarwal, A. ; Capell, C. ; Richmond, J. ; Ryu, S. H. ; Palmour, J. ; Balachandran, S. ; Chow, T. P. ; Bayne, S. ; Geil, B. ; Jones, K. A. ; Scozzie, C.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.901-904,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. SiC BJT Technology for Power Switching and RF Applications
Agarwal, A. ; Ryu, S.H. ; Capell, C. ; Richmond, J. ; Palmour, J. ; Bartlow, H. ; Chow, P. ; Scozzie, S. ; Tipton, W. ; Baynes, S. ; Jones, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1141-1144,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Power Amplification in UHF Band Using SiC RF Power BJTs
Agarwal, A. ; Capell, C. ; Phan, B. ; Milligan, J. ; Palmour, J.W. ; Stambaugh, J. ; Bartlow, H. ; Brewer, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.785-788,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436