CHARACTERIZATION OF VACANCY DEFECTS IN As-GROWN AND ELECTRON IRRADIATED GaAs BY POSITRON ANNIHILATION.

CHARACTERIZATION OF VACANCY DEFECTS IN As-GROWN AND ELECTRON IRRADIATED GaAs BY POSITRON ANNIHILATION.

Author(s):

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part1

Page(from):

265

Page(to):

270

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019743
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors - ICDS
Conf. info. (Number):	14th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1986.08.18-1986.08.22

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