1.

Conference Proceedings
Conference Proceedings
1. The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress
C. Hwang ; S. Park ; S. Chung ; J. Lee ; Y. Yang
Pub. info.: Thin Film Transistor Technology 8.  pp.301-305,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(8)
2.

Conference Proceedings
Conference Proceedings
2. Electrochemical Impcdence Spectroscopy of Direct Methanol Fuel Cell
K. Hsueh ; C. Lai ; C. Hwang ; F. Wu ; L. Tsai ; A. Peng ; J. Lin
Pub. info.: Proton exchange membrane fuel cells V, in honor of Supramaniam Srinivasan.  pp.323-330,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(6)
3.

Conference Proceedings
Conference Proceedings
3. Radiation Exposure Effect on Amorphous Silicon Thin Film Transistors
H. Nominanda ; Y. Kuo ; C. Chen ; C. Hwang
Pub. info.: 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT).  pp.261-266,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 8(1)
4.

Conference Proceedings
Conference Proceedings
4. Influence of an In-Situ Formed Interfacial SINx Layer on the Electrical Performance and Thermal Stability of High-k HfO₂ Films
S. H. Hong ; J. Kim ; T. Park ; J. Won ; R. Jung ; S. Kim ; C. Hwang ; M. J. Cho
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.257-268,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Improvement in Thermal Stability of MOCVD HfO₂ Films Using an ALD SiNx Interfacial Layer
H. J. Jang ; S. H. Hong ; T. Park ; J. Heo ; S. Yang ; M. Kim ; C. Hwang
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.393-398,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
6.

Conference Proceedings
Conference Proceedings
6. Influence of Deposition Temperature of Atomic-Layer-Deposited HfO₂ Films on Interfacial Chemical Structure and Interface Trap Density
J. Kim ; T. Park ; C. Hwang ; S. H. Hong ; M. Seo
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.419-424,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
7.

Conference Proceedings
Conference Proceedings
7. Annealing Effect and Suppression of Hydration of La₂O₃ Thin Films
D. Eom ; S. No ; C. Hwang ; H. Kim
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.219-226,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
8.

Conference Proceedings
Conference Proceedings
8. Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HhO2 Thin Films on Si, Sil-xGex and Ge Substrates
T. Park ; J. Kim ; J. Jang ; M. Seo ; C. Hwang
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.111-120,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
9.

Conference Proceedings
Conference Proceedings
9. The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO₂ Thin Films by In-Situ NH₃ Injection
J. Kim ; T. Park ; M. Cho ; M. Seo ; J. Jang ; C. Hwang
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.435-440,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
10.

Conference Proceedings
Conference Proceedings
10. Thermal Stability of Stack Structures of Aluminum Nitride and Lanthanum Oxide Thin Films
D. Eom ; C. Hwang ; H. Kim
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.121-128,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)