Characterization of Deep-Level Traps in GaAs Semi-Insulating Substrates Using Capacitance Transient Measurements

Characterization of Deep-Level Traps in GaAs Semi-Insulating Substrates Using Capacitance Transient Measurements

Author(s):

Publication title:

Proceedings of the Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

1993-27

Pub. Year:

1993

Page(from):

235

Page(to):

244

Pages:

10

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770699 [1566770696]

Language:

English

Call no.:

E23400/940142

Type:

Conference Proceedings

Details

TDL ID:	ZA00051845
Series ID:	PA00000028
Conf. info. (Name):	Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII) : 183rd Meeting of The Electrochemical Society
Conf. info. (Number):	18th ; 183rd
Conf. info. (Venue):	Honolulu, HI
Conf. info. (Date):	1993.05.16-1993.05.21

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