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CHARACTERIZATION OF InGaAs/InP EPITAXIAL LAYERS GROWN OVER V-GROOVE PATTERNED InP SUBSTRATES USING GAS SOURCE MOLECULAR BEAM EPITAXY

Author(s):
Bulitka, N. J.
Gupta, A.
Robinson, B. J.
Thompson, D. A.
Weatherly, G. C.
Simmons, J. G.
1 more
Publication title:
Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
326
Pub. Year:
1994
Page(from):
39
Pub. info.:
Pittsburgh: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992252 [1558992251]
Language:
English
Call no.:
M23500/326
Type:
Conference Proceedings

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