Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation
- Author(s):
- Bravo-Vasquez, J. P. ( Cornell Univ. (USA) )
- Kwark, Y.-J. ( Cornell Univ. (USA) )
- Ober, C. K. ( Cornell Univ. (USA) )
- Cao, H. B. ( Intel Corp. (USA) )
- Deng, H. ( Intel Corp. (USA) )
- Publication title:
- Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5753(1)
- Pub. Year:
- 2005
- Pt.:
- 1
- Page(from):
- 109
- Page(to):
- 121
- Pages:
- 13
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819457332 [0819457337]
- Language:
- English
- Call no.:
- P63600/5753-1
- Type:
- Conference Proceedings
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