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16 results

Conference Proceedings

1. Influence of the Irradiation Temperature on the Formation of Defects in Reactor Pressure-Vessel Steels

Grosse, M. ; Hempel, A. ; Bohmert, J. ; Brauer, G. ; Haggag, F. M.

Pub. info.:	Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.515-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	439

Conference Proceedings

2. Aluminum and Electron-Irradiation-Induced Deep Levels in n-Type and p-Type 6H-SiC

Gong, M. ; Beling, C. D. ; Fung, S. ; Brauer, G. ; Wirth, H. ; Skorupa, W. ; You, Z-P.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.455-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

3. Positron Studies of Defects in Nitrogen and Carbon Implanted Titanium

Soltani-Farshi, M. ; Baumann, H. ; Anwand, W. ; Brauer, G. ; Coleman, P. G. ; Richter, E. ; Kreissig, U. ; Bethge, K.

Pub. info.:	Diffusion mechanisms in crystalline materials : symposium held April 13-16, 1998, San Francisco, California, U.S.A.. pp.81-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	527

Conference Proceedings

4. Deep Level Defects in He-Implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy

Chen, X.D. ; Ling, C.C. ; Fung, S. ; Beling, C.D. ; Wu, H.S. ; Brauer, G. ; Anwand, W. ; Skorupa, W.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.163-168, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

5. High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

Panknin, D. ; Wirth, H. ; Anwand, W. ; Brauer, G. ; Skorupa, W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.877-880, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Slow Positron Beam Investigations of Defects Caused by B+ Implantation into Epitaxial 6H-SiC

Anwand, W. ; Brauer, G. ; Kuriplach, J. ; Skorupa, W.

Pub. info.:	Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003. pp.36-38, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	445-446

Conference Proceedings

7. Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

Anwand, W. ; Brauer, G. ; Panknin, D. ; Skorupa, W.

Pub. info.:	Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany. pp.442-444, 2001. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	363-365

Conference Proceedings

8. Positron Annihilation Lifetime Study of Pure and Doped LiF

Sendezera, E.J. ; Davidson, A.T. ; Anwand, W. ; Brauer, G. ; Nicht, E.-M.

Pub. info.:	Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany. pp.386-388, 2001. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	363-365

Conference Proceedings

9. GaN Thin Films on SiC Substrates Studied Using Variable Energy Positron Annihilation Spectroscopy

Hu, Y.F. ; Shan, Y.Y. ; Beling, C.D. ; Fung, S. ; Xie, M.H. ; Cheung, S.H. ; Tu, J. ; Brauer, G. ; Anwand, W. ; Tong, D.S.Y.

Pub. info.:	Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany. pp.478-480, 2001. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	363-365

10.

Conference Proceedings

10. Depth-Dependence Recovery of Helium-Implanted 18 Carats Gold-Silver Alloy

Thome, T. ; Fradin, J. ; Grynszpan, R.I. ; Anwand, W. ; Brauer, G.

Pub. info.:	Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany. pp.484-486, 2001. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	363-365

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