Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

11 results

Conference Proceedings

1. Etch Pit Observation of Ga1-xInxAs Epitaxial Layers Grown on GaAs and InP Substrates

Pal,R. ; Radhakrishnan,J.K. ; Agarwal,S.K. ; Bose,D.N.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.345-348, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

2. Microwave Synthesis,Growth and Characterization of ZnTe

Bhunia,S. ; Bose,D.N.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.158-161, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

3. Surface Passivation of GaAs and InGaAs and Device Applications

Bose,D.N. ; Ali,S.T.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.213-220, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

4. A Novel Technique for the Characterization of Silicon Oxynitride Thin Films

Basa,D.K. ; Bose,M. ; Bose,D.N.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part2 pp.823-828, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

5. Growth and Characterization of InGaAs/InP Quantum Wells

Bose,D.N. ; Banerji,P. ; Pal,D.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.142-148, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

6. Growth and Characterization of III-V Compounds and Alloys

Pal,Ramjay ; Agarwal,S.K. ; Bose,D.N.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.268-271, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

7. Steady-state and Time-resolved Photoconductivity Measurements of Minority Carrier Lifetime in ZnTe

Bose,D.N. ; Johnston,S. ; Ahrenkiel,R.K. ; Bhunia,S.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part2 pp.1349-1352, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

8. Fabrication of GaSb/ZnTe Heterojunctions by Pulsed Laser Deposition

Banerji,P. ; Bhunia,S. ; Bose,D.N.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.212-214, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

9. Photoluminescence and Raman Studies of Silicon Ion Implantation Annealing in GaAs

Sripad,S. ; Bhunia,S. ; Bose,D.N. ; Kumar,K.C. ; Rao,A.V.S.K. ; Govindacharyulu,P.A. ; Khatri,R.K. ; Bhattacharya,B. ; Saravanam,G.Sai ; Bandopadhyay,A.K.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.287-290, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

10.

Conference Proceedings

10. Growth and Characterization of GaAs Epitaxial Layers on Ge by Atmospheric Pressure MOVPE

Tyagi,R. ; Pal,R. ; Singh,M. ; Srinivasan,T. ; Agarwal,S.K. ; Pal,D. ; Bose,D.N. ; Maithani,M. ; Hussain,M.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.384-387, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

11 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: Bose,D.N.