1.

Conference Proceedings
Conference Proceedings
1. Reduced Pressure-Chemical Vapor Deposition of Ge Thick Layers on Si(001) for Microelectronics and Optoelectronics Purposes
Hartmann, J.M. ; Papon, A.M. ; Holliger, P. ; Rolland, G. ; Billon, T. ; Rouviere, M. ; Vivien, L. ; Laval, S.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.147-152,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. Reduced Pressure-Chemical Vapor Deposition of High Ge Content (20%-55%) SiGe Virtual Substrates
Bogumilowicz, Y. ; Hartmann, J.M. ; Laugier, F. ; Rolland, G. ; Billon, T. ; Renard, V. ; Olshanetsky, E.B. ; Estibals, O. ; Kvon, Z.D. ; Portal, J.C.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.45-50,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. ; Ferret, P. ; Di Cioccio, L. ; Collard, E. ; Lhorte, A. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1161-1164,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Advances in SiC Materials and Technology for Schottky Diode Applications
Di Cioccio, L. ; Billon, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1119-1124,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Pernot, E. ; Neyret, E. ; Moulin, C. ; Pernot-Rejmankova, P. ; Templier, F. ; Cioccio, L.Di. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.419-422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Properties of Transmission Lines on Various SiC Substrates
Royet, A. S. ; Cabon, B. ; Ouisse, T. ; Billon, T.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1267-1270,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. LPCVD synthesis of silicon nanodots from silane and for flash memory devices
Cocheteau, V. ; Caussat, B. ; Mur, P. ; Scheid, E. ; Donnadieu, P. ; Billon, T.
Pub. info.: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.523-530,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-09
8.

Conference Proceedings
Conference Proceedings
8. Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
Hugonnard-Bruyere, E. ; Letertre, F. ; Cioccio, L. Di ; Bardeleben, H. J. von ; Cantin, J. L. ; Ouisse, T. ; Billon, T. ; Guillot, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.715-718,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
9.

Conference Proceedings
Conference Proceedings
9. Al and Al/C High Dose Implantation in 4H-SiC
Bluet, J. M. ; Pernot, J. ; Billon, T. ; Contreras, S. ; Michaud, J. F. ; Robert, J. L. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.885-888,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
10.

Conference Proceedings
Conference Proceedings
10. SiC In Situ Pre-Growth Etching: A Thermodynamic Study
Neyret, E. ; Cioccio, L. Di ; Blanquet, E. ; Raffy, C. ; Pudda, C. ; Billon, T. ; Camassel, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1041-1044,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)