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Conference Proceedings

1. Decoupled Plasma Nitridation of Ultra-Thin Gate Oxides for 60-90 nm Technologies

Bidaud, M. ; Carrere, J.-P. ; Bocuf, F. ; Dachs, C. ; Parthasarathy, C. ; Guyader, F.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.517-524, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

2. High Reliable In Situ Steam Generation Process for 1.5-2.5 nm Gate Oxides

Bidaud, M. ; Guyader, F. ; Glowacki, F. ; Monsieur, F. ; Ray, D. ; Bruyere, S. ; Vincent, E. ; Barb, K.

Pub. info.:	Rapid thermal and other short-time processing technologies : proceedings of the international symposium. pp.187-194, 2000. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-9

Conference Proceedings

3. Analysis of MOS device capacitance-voltage characteristics based on the self-consistent solution of the schrodinger and poisson equations

Raynaud, C. ; Autran, J. L. ; Masson, P. ; Bidaud, M. ; Poncet, A.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.159-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

Conference Proceedings

4. Effect of Post Nitridation Anneal on Physical Properties of Plasma Nitrided Oxides

Bienacel, J. ; Barge, D. ; Garnier, P. ; Bidaud, M. ; Vishnubhotla, L. ; Pouilloux, I. ; Barla, K.

Pub. info.:	Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium. pp.223-231, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-01