1.

Conference Proceedings
Conference Proceedings
1. Effect of Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces
Henderson, T. M. ; Greer, J. C. ; Bersuker, G. ; Korkin, A. ; Bartlett, R. J.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.373-385,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks
Majhi, P. ; Bersuker, G. ; Lee, B. H.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.29-41,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
3.

Conference Proceedings
Conference Proceedings
3. SUB-NANOMETER HIGH -K GATE STACK SCALING USING THE HF-LAST/NH3 AKNEAL INTERFACE
Peterson, J. ; Barnett, J. ; Young, C. ; Hou, A. ; Gutt, J. ; Gopalan, S. ; Lee, C.H. ; Li, H.J. ; Moumen, N. ; Chaudhary, N. ; Lee, B.H. ; Bersuker, G. ; Zietzoff, P. ; Brown, G.A. ; Lysaght, P. ; Gardner, M. ; Murto, R.W. ; Huff, H.
Pub. info.: Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium.  pp.93-99,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-26
4.

Conference Proceedings
Conference Proceedings
4. 17 Properties of the Interfacial Layer in the High-k Gate Stack and Transistor Performance
Bersuker, G. ; Peterson, J. ; Burnett, J. ; Korkin, A. ; Sim, J.H. ; Choi, R. ; Lee, B. H. ; Greer, J. ; Lysaght, P. ; Huff, H.R.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.141-145,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
5.

Conference Proceedings
Conference Proceedings
5. PROPERTIES OF CHEMICAL OXIDES FROM PRE-GATE CLEAN PROCESSES AND THEIR ROLE IN THE ELECTRICAL THICKNESS OF THERMALLY GROWN ULTRATHIN GATE OXIDES
Guan, J. ; Gale, G. ; Bersuker, G. ; Jeon, Y. ; Nguyen, B. ; Barnett, J. ; Jackson, M. ; Burkman, D. ; Peavey, P. ; Yokomizo, K. ; Ueno, K. ; Yamasaka, M. ; Imai, M. ; Kitahara, S. ; Shindo, N.
Pub. info.: Cleaning technology in semiconductor device manufacturing : proceedings of the sixth international symposium.  pp.77-83,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-36
6.

Conference Proceedings
Conference Proceedings
6. Influence of the Standard CMOS Procesing on Ta2O5 Gate Dielectric Transistors Performance
Bersuker, G. ; Gilmer, M. ; Zeitzoff, P.M. ; Brown, G.A. ; Jackson, M.D. ; Shaapur, F. ; Foran, B. ; Huff, H.R.
Pub. info.: Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium.  pp.178-186,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-5
7.

Conference Proceedings
Conference Proceedings
7. Development of Silicon Nitride Films for Gate Dielectric Applications
Brady, D. ; Watt, V.H.C. ; Karamcheti, A. ; Vishnubhotla, L. ; Bersuker, G. ; Kim, S. ; Zietzoff, P. ; Gilmer, M. ; Guan, J. ; Torres, K. ; Nguyen, B. ; Williamson, G. ; Brown, G. ; Gale, G. ; Jackson, M. ; Huff, H.R.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.207-218,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
8.

Conference Proceedings
Conference Proceedings
8. Electroplated Cu Recrystallization in Damascene Structures at Elevated Temperatures
Jiang, Q-T. ; Thomas, M. E. ; Bersuker, G. ; Foran, B. ; Mikkola, R. ; Carpenter, B. ; Ormando, J.
Pub. info.: Advanced interconnects and contacts : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.429-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 564
9.

Conference Proceedings
Conference Proceedings
9. Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing
Lysaght, P. S. ; Nguyen, B. ; Bennett, J. ; Williamson, G. ; Torres, K. ; Gilmer, M. ; Luo, T-Y. ; Brady, D. ; Guan, J. ; Brown, G. A. ; Zeitzoff, P. ; Bersuker, G. ; Mucha, J. ; Geyling, F. ; Gebera, G. ; Vishnubhotla, L. ; Jackson, M. D. ; Huff, H. R.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.283-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
10.

Conference Proceedings
Conference Proceedings
10. Process and Manufacturing Challenges for High-K Gate Stack Systems
Gilmer, M. C. ; Luo, T-Y. ; Huff, H. R. ; Jackson, M. D. ; Kim, S. ; Bersuker, G. ; Zeitzoff, P. ; Vishnubhotla, L. ; Brown, G. A. ; Amos, R. ; Brady, D. ; Watt, V. H. C. ; Gale, G. ; Guan, J. ; Nguyen, B. ; Williamson, G. ; Lysaght, P. ; Torres, K. ; Geyling, F. ; Gondran, C. F. H.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.323-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567