1.

Conference Proceedings
Conference Proceedings
1. AlGaN-based structures on sapphire for visible-blind Schottky-barrier UV photodetectors:toward high-performance device applications
Omnes,F. ; Monroy,E. ; Beaumont,B. ; Calle,F. ; Munoz,E. ; Gibart,P.
Pub. info.: Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California.  pp.234-249,  2000.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3948
2.

Conference Proceedings
Conference Proceedings
2. Metal organic vapor phase epitaxy of GaN and lateral overgrowth
Beaumont,B. ; Gibart,P.
Pub. info.: Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland.  pp.2-13,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3725
3.

Conference Proceedings
Conference Proceedings
3. Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3
Allegre,J. ; Lefebvre,P. ; Camassel,J. ; Beaumont,B. ; Gibart,P.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1279-1282,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Blue-U.V.Homojunction GaN LEDs Fabricated by MOVPE
Beaumont,B. ; Calle,F. ; Haffouz,S. ; Monroy,E. ; Leroux,M. ; Calleja,E. ; Lorenzini,P. ; Mufioz,E. ; Gibart,P.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1425-1428,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Blue emission in Mg doped CaN studied by time-resolved spectroscopy
Seitz,R. ; Gaspar,C. ; Monteiro,T. ; Pereira,E. ; Leroux,M. ; Beaumont,B. ; Gibart,P.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1155-1160,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263