SiC BJT Technology for Power Switching and RF Applications

SiC BJT Technology for Power Switching and RF Applications

Author(s):

Agarwal, A.

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

1141

Page(to):

1144

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013364
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings SiC BJT's for High Power Switching and RF Applications Agarwal, Anant, Ryu, Sei-Hyung, Capell, Craig, Richmond, James, Palmour, John W., Phan, Binh, Stambaugh, Jerry, Bartlow, … Materials Research Society	7 Conference Proceedings Degradation of Current Gain in SiC BJTs Anant Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei-Hyung Ryu, John Palmour, Kenneth Jones, Charles … Materials Research Society
2 Conference Proceedings 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami, S., Agarwal, A., Capell, C., Richmond, J., Ryu, S. H., Palmour, J., Balachandran, S., Chow, T. P., Bayne, … Trans Tech Publications	8 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
3 Conference Proceedings First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs Agarwal, A.K, Husna, F., Haley, J., Bartlow, H., McCalpin, B., Krishnaswami, S., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications	9 Conference Proceedings Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT Tang, Y., Chow, T.P., Agarwal, A.K., Ryu, S.-H., Palmour, J.W. Trans Tech Publications
4 Conference Proceedings Power Amplification in UHF Band Using SiC RF Power BJTs Agarwal, A., Capell, C., Phan, B., Milligan, J., Palmour, J.W., Stambaugh, J., Bartlow, H., Brewer, K. Trans Tech Publications	10 Conference Proceedings A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Agarwal, A.K., Krishnaswami, S., Damsky, B., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications
5 Conference Proceedings Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs Agarwal, A.K., Krishnaswami, S., Richmond, J., Capell, C., Ryu, S.H., Palmour, J., Geil, B.R, Katsis, D., Scozzie, C.J., … Trans Tech Publications	11 Conference Proceedings Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications
6 Conference Proceedings High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications	12 Conference Proceedings 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature Richmond, J., Ryu, S.H., Krishnaswami, S., Agarwal, A.K., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, C.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12