1.

Conference Proceedings
Conference Proceedings
1. First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs
Agarwal, A.K ; Husna, F. ; Haley, J. ; Bartlow, H. ; McCalpin, B. ; Krishnaswami, S. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1413-1416,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. SiC BJT Technology for Power Switching and RF Applications
Agarwal, A. ; Ryu, S.H. ; Capell, C. ; Richmond, J. ; Palmour, J. ; Bartlow, H. ; Chow, P. ; Scozzie, S. ; Tipton, W. ; Baynes, S. ; Jones, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1141-1144,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Power Amplification in UHF Band Using SiC RF Power BJTs
Agarwal, A. ; Capell, C. ; Phan, B. ; Milligan, J. ; Palmour, J.W. ; Stambaugh, J. ; Bartlow, H. ; Brewer, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.785-788,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436