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11 results

Conference Proceedings

1. Intrinsic defects in electron irradiated p-type GaAs

Jia,Y.Q. ; Bardeleben,H.J.von ; Stievenard,D. ; Delerue,C.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.965-970, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Energy levels associated with the metastable state of EL2

Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.911-916, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Coexistence of deep and shallow paramagnetic excited states of the DX center in GaAlAs

Bardeleben,H.J.von ; Sheinkmann,M. ; Delerue,C. ; Lannoo,M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.787-792, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model

Bardeleben,H.J.von ; Delerue,C. ; Stievenard,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.223-228, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. High temperature luminescence due to Er in porous Si

Strepikhova,M. ; Jantsch,W. ; Kosher,G. ; Schoisswohl,M. ; Cantin,J.P. ; Bardeleben,H.J.von

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1533-1538, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

6. Structure of the Pb Center:ENDOR Investigation

Bratus,V.Ya. ; Ishchenko,S.S. ; Okulov,S.M. ; Vorona,I.P. ; Bardeleben,H.J.von

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.529-534, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

7. Electron paramagnetic resonance studies of low temperature molecular beam epitaxial GaAs layers

Bardeleben,H.J.von ; Jia,Y.Q. ; Manasreh,M.O. ; Evans,K.R. ; Stutz,C.E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.1051-1056, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

8. Defects in As-Prepared and Thermally Oxydized Porous Silicon

Bardeleben,H.J.von ; Grosman,A. ; Morazzani,V. ; Ortega,C. ; Siejka,J.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1487-1491, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Electrical Characterization of Surface Defects on Porous p-type Silicon

Cadet,C. ; Deresmes,D. ; Vuillaume,D. ; Stievenard,D. ; Grosman,A. ; Ortega,C. ; Siejka,J. ; Bardeleben,H.J.von

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1475-1480, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

10.

Conference Proceedings

10. The Ultrasonics-Induced-Quenching of PPC Releated to DX Centers in AlxGa1-x-As

Belyaev,A.E. ; Bardeleben,H.J.von ; Fille,M.L. ; Oborina,E.I. ; Ryabchenko,Yu.S. ; Savchuk,A.U. ; Sheinkman,M.K.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1057-1062, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

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