1.

Conference Proceedings
Conference Proceedings
1. Radiation-Induced Deep Levels in Lead- and Tin-Doped n-Type Czochralski Silicon
David, M.-L. ; Simoen, E. ; Claeys, C. ; Neimash, V. ; Kras'ko, M. ; Kraitchinski, A. ; Voytovuch, V. ; Tishcenko, V. ; Barbot, J.F.
Pub. info.: High purity silicon VIII : proceedings of the international symposium.  pp.395-406,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-05
2.

Conference Proceedings
Conference Proceedings
2. Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC
David, M.L. ; Alfieri, G. ; Monakhov, E.V. ; Hallen, A. ; Barbot, J.F. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.371-374,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. Contribution of X-Ray Diffraction Simulations to Experimental Study of High Energy He Implantation at High Dose in 4H-SiC at Room Temperature
Declemy, A. ; Shiryaev, A. ; Stepanov, S. ; Barbot, J.F. ; Beaufort, M.F. ; Oliviero, E. ; Ntsoenzok, E. ; Sauvage, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.937-940,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460