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14 results

Conference Proceedings

1. Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Pernot, E. ; Anikin, M. ; Pons, M. ; Chaix-Pluchery, O. ; Baillet, F. ; Matko, I. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.143-146, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Numerical simulation of SiC processes: A characterization tool for the design of epitaxial structures in electronics

Pans, M. ; Nishizawa, S. ; Wettmann, P. ; Ucar, M. ; Blanquet, E. ; Dedulle, J. M. ; Baillet, F. ; Chaussende, D. ; Bernard, C. ; Madar, R.

Pub. info.:	EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium. pp.1-12, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-09

Conference Proceedings

3. Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes

Pons, M. ; Blanquet, E. ; Dedulle, J. M. ; Ucar, M. ; Wellmann, P. ; Danielsson, O. ; Ferret, P. ; Cioccio, L. Di ; Baillet, F. ; Chaussende, D. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.3-8, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

4. Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Pernot, E. ; Anikin, M. ; Pons, M. ; Chaix-Pluchery, O. ; Baillet, F. ; Matko, I. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.143-146, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Optical Characterization of Full SiC Wafer

El Harrouni, I. ; Bluet, J.M. ; Ziane, D. ; Mermoux, M. ; Baillet, F. ; Guillot, G.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.593-596, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

6. Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC

Mermoux, M. ; Crisci, A. ; Baillet, F.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.609-612, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

7. Characterization of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission

Thuaire, A. ; Mermoux, M. ; Crisci, A. ; Camara, N. ; Bano, E. ; Baillet, F. ; Pernot, E.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.437-440, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method

Auvray, L. ; Chaussende, D. ; Baillet, F. ; Charpentier, L. ; Pons, M. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.135-138, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth

Charpentier, L. ; Baillet, F. ; Chaussende, D. ; Auvray, L. ; Pons, M. ; Pernot, E. ; Madar, R.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.139-142, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Raman Imaging Analysis of SiC Wafers

Mermoux, M. ; Crisci, A. ; Baillet, F.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.353-356, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

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Author: Baillet, F.