1.

Conference Proceedings
Conference Proceedings
1. High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
L. Lanni ; B.G. Malm ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.966-969,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Investigation of Current Gain Degradation in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; B.G. Malm ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1131-1134,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Bipolar Integrated OR-NOR Gate in 4H-SiC
L. Lanni ; R. Ghandi ; C.M. Zetterling ; B.G. Malm ; M. Östling
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1257-1260,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates
B.G. Malm ; J. Hallstedt ; P. Hellström ; M. Ostling
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.529-537,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
5.

Conference Proceedings
Conference Proceedings
5. Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
L. Farese ; B.G. Malm ; M. Domeij ; M. Östling
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1037-1040,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
6.

Conference Proceedings
Conference Proceedings
6. Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; B.G. Malm ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1061-1064,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
L. Lanni ; B.G. Malm ; M. Östling ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1005-1008,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
8.

Conference Proceedings
Conference Proceedings
8. ECL-Based SiC Logic Circuits for Extreme Temperatures
L. Lanni ; B.G. Malm ; M. Östling ; C.M. Zetterling
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.910-913,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
9.

Conference Proceedings
Conference Proceedings
9. Total Dose Effects on 4H-SiC Bipolar Junction Transistors
S.S. Suvanam ; L. Lanni ; B.G. Malm ; C.M. Zetterling ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.579-582,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897