1.

Conference Proceedings
Conference Proceedings
1. An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
J.D. Seo ; J.H. An ; J.G. Kim ; J.K. Kim ; M.O. Kyun ; W.J. Lee ; I.S. Kim ; B.C. Shin ; K.R. Ku
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.9-12,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
J.G. Kim ; J.H. An ; J.D. Seo ; J.K. Kim ; M.O. Kyun ; W.J. Lee ; I.S. Kim ; B.C. Shin ; K.R. Ku
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.25-28,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
C.K. Park ; G.S. Lee ; J.Y. Lee ; M.O. Kyun ; W.J. Lee ; B.C. Shin ; S. Nishino
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.153-156,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]
T.W. Lee ; I.G. Yeo ; B.C. Shin ; W.J. Lee ; M.S. Park
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.107-110,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
J.H. An ; G.S. Lee ; W.J. Lee ; B.C. Shin ; J.D. Seo
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.831-834,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Non-Polar SiC Crystal Growth with m-PIane(1-100) and α-Plane(11-20) by PVT Method
I.G. Yeo ; T.W. Lee ; W.J. Lee ; B.C. Shin ; I.S. Kim
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.37-40,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648