HfO2 Gate Dielectrics Deposited via Tetrakis Dlethylamido Hafnium
- Author(s):
- Publication title:
- Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2002-28
- Pub. Year:
- 2002
- Page(from):
- 49
- Page(to):
- 62
- Pages:
- 14
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773959 [1566773954]
- Language:
- English
- Call no.:
- E23400/200228
- Type:
- Conference Proceedings
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