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Conference Proceedings

1. DEFECTS AND THEIR CONTROL IN Si02 FILMS PREPARED BY D2-LAMP PHOTOCHEMICAL VAPOR DEPOSITION

Nonaka, Hidehiko ; Arai, Kazuo ; Ichimura, Shingo

Pub. info.:	Chemical perspectives of microelectronic materials : symposium held November 30-December 2, 1988, Boston, Massachusetts, U.S.A.. pp.507-512, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	131

Conference Proceedings

2. New Crecible Design for SiC Single Crystal Growth by Sublimation

Nishizawa, Shin-ichi ; Yamaguchi, Hirotaka ; Kato, Tomohisa ; Khan, M. Nasir ; Arai, Kazuo ; Oyanagi, Naoki ; Kitou, Yasuo ; Bahng,Wook

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

3. Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition

Okamoto, Mitsuo ; Kosugi, Ryoji ; Nakashima, Shinichi ; Fukuda, Kenji ; Arai, Kazuo

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.259-264, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

4. Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure

Harada, S. ; Suzuki, S. ; Senzaki, J. ; Kosugi, R. ; Adachi, K. ; Fukuda, K. ; Arai, Kazuo

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1069-1072, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393