Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals | 東京工業大学附属図書館文献データベース

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Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals

Author(s):

Varatharajan Rengarajan

Murugesu Yoganathan

Ejiro Emorhokpor

Publication title:

Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

1246

Pub. Year:

2010

Page(from):

3

Page(to):

14

Pages:

12

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605112237 [1605112232]

Language:

English

Call no.:

M23500/1246

Type:

Conference Proceedings

Details

TDL ID:	ZA00050335
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium B
Conf. info. (Number):	2010
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2010.04.05-2010.04.09

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