Aspects of the Growth of InP / InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy

Aspects of the Growth of InP / InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy

Author(s):

Publication title:

Spectroscopy of semiconductor microstructures

Title of ser.:

NATO ASI series. Series B, Physics

Ser. no.:

206

Pub. Year:

1989

Page(from):

45

Page(to):

63

Pages:

19

Pub. info.:

New York: Plenum Press

ISBN:

9780306433788 [0306433788]

Language:

English

Call no.:

N11479/206

Type:

Conference Proceedings

Details

TDL ID:	ZA00017221
Series ID:	PA00000015
Conf. info. (Name):	NATO Advanced Research Workshop on Spectroscopy of Semiconductor Microstructures
Conf. info. (Number):	1989
Conf. info. (Venue):	Venice, Italy
Conf. info. (Date):	1989.05.09-1989.05.13

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