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60 results

Conference Proceedings

1. Distinct Magnesium Incorporation Behavior in Laterally Grown AlGaN

Liu, R. ; Bell, A. ; Ponce, F.A. ; Cherns, D. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.27-34, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

2. Effects of Si-Doping on the Microstructure of AlGaN/GaN Multiple-Quantum-Well

Liu, R. ; Ponce, F.A. ; Sahonta, S-L. ; Cherns, D. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.775-780, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

3. Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells

Monemar, B. ; Paskov, P.P. ; Bergman, J.P. ; Pozina, G. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A.. pp.501-508, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	693

Conference Proceedings

4. Strain Evolution and Phonons in AlN/GaN Superlattices

Darakchieva, V. ; Paskov, P.P. ; Schubert, M. ; Valcheva, B. ; Paskova, T. ; Arwin, H. ; Monemar, B. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.741-746, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

5. Platelet Inversion Domains Induced by Mg-Doping in ELOG AlGaN Films

Liu, R. ; Ponce, F.A. ; Cherns, D. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.765-770, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

6. Defect and Stress Control of AlGaN and Fabrication of High-Efficiency UV-LED

Amano, H. ; Iwaya, M. ; Nitta, S. ; Terao, S. ; Nakamura, R. ; Ukai, T. ; Saitoh, S. ; Kamiyama, S. ; Wetzel, C. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

7. High Efficiency UV Emitter Using High Quality GaN/AlxGa1-xN Multi-Quantum Well Active Layer

Iwaya, M. ; Terao, S. ; Ukai, T. ; Nakamura, R. ; Kamiyama, S. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

8. Hollow Core Dislocations in Mg-Doped AlGaN

Cherns, D. ; Wang, Y.Q. ; Liu, R. ; Ponce, F.A. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.609-614, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

9. Heteroepitaxy and Characterization of Low-Dislocation-Density GaN Single on Periodically Grooved Substrates

Detchprohm, T. ; Yano, M. ; Nakamura, R. ; Sano, S. ; Mochiduki, S. ; Nakamura, T. ; Amano, H. ; Akasaki, I.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

10.

Conference Proceedings

10. Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures

Buyanov, A. V. ; Sandberg, J. ; Bergman, J. P. ; Sernelius, B. E. ; Holtz, P-O. ; Monemar, B. ; Amano, H. ; Akasaki, I.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.585-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

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Author: Akasaki, I.