1.

Conference Proceedings
Conference Proceedings
1. SiC/SiO2 interface defects
Afanas'ev, V. V.
Pub. info.: Defects in SiO[2] and related dielectrics : science and technology.  pp.581-598,  2000.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 2
2.

Conference Proceedings
Conference Proceedings
2. 16 Properties of HfTaxOy High-K Layers Deposited by ALCVD
Zhao, C. ; Rittersma, Z. M. ; Van Berkum, J. G. M. ; Snijders, J. H. M. ; Hendriks, A. ; Breimer, P. ; Groat, P. ; Maes, J. W. ; Wittesr, H. ; Afanas'ev, V. V. ; Tois, E. ; Tuominen, M. ; Caymax, M. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.133-140,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
3.

Conference Proceedings
Conference Proceedings
3. SiC/SiO2 Interface States: Properties and Models
Afanas'ev, V. V. ; Ciobanu, F. ; Dimitrijev, S. ; Pensl, G. ; Stesmans, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.563-568,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers
Afanas'ev, V. V. ; Stesmans, A.
Pub. info.: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.195-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 592
5.

Conference Proceedings
Conference Proceedings
5. Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-k Dielectric Layers on Silicon
Stesmans, A. L. ; Afanas'ev, V. V.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.49-62,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
6.

Conference Proceedings
Conference Proceedings
6. Physics of SiC Processing
Pensl, G. ; Afanas'ev, V. V. ; Bassler, M. ; Frank, T. ; Laube, M. ; Weidner, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.831-836,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility
Bassler, M. ; Afanas'ev, V. V. ; Pensl, G. ; Schulz, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1065-1068,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)