1.

Conference Proceedings
Conference Proceedings
1. 76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er
Abernathy,C.R. ; Overberg,M.J. ; Mackenzie,J.D. ; Hommerich,U. ; Pearton,S.J. ; Wilson,R.G. ; Zavada,J.M.
Pub. info.: Rare-earth-doped materials and devices IV : 26-27 January 2000, San Jose, California.  pp.76-86,  2000.  Bellingham, Washington.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3942
2.

Conference Proceedings
Conference Proceedings
2. 1.55-ｦﾌm Er-doped GaN LED
Shen,H. ; Pamulapati,J. ; Taysing,M. ; Wood,M.C. ; Lareau,R.T. ; Ervin,M.H. ; Mackenzie,J.D. ; Ren,F. ; Abernathy,C.R. ; Zavada,J.M.
Pub. info.: Rare-earth-doped materials and devices III : 27-28 January 1999, San Jose, California.  pp.107-111,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3622
3.

Conference Proceedings
Conference Proceedings
3. The Role of Hydrogen in UHV Growth of III-V Semiconductors
Abernathy,C.R.
Pub. info.: Hydrogen in compound semiconductors.  pp.3-26,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 148-149
4.

Conference Proceedings
Conference Proceedings
4. Passivation of shallow acceptors in Si and GaAs by annealing in H2
Veloarisoa,I.A. ; Kozuch,D.M. ; Stavola,M. ; Peale,R.E. ; Watkins,G.D. ; Pearton,S.J. ; Abernathy,C.R. ; Hobson,W.S.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.111-118,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
5.

Conference Proceedings
Conference Proceedings
5. Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source
Hobson,W.S. ; McAfee,S.R. ; Jones,K.S. ; Paroskevopoulos,N.C. ; Abernathy,C.R. ; Sputz,S.K. ; Harris,T.D. ; Schnoes,M.Lamont ; Pearton,S.J.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.1063-1068,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
6.

Conference Proceedings
Conference Proceedings
6. NoVel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations
Stavola,M. ; Zheng,J.-F. ; Cheng,Y.M. ; Abernathy,C.R. ; Pearton,S.J.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.809-816,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Effect of low temperature growth on impurity and defect incorporation in AlGaAs grown by MOMBE
Abernathy,C.R. ; Pearton,S.J. ; Bohling,D.A.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.1057-1062,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
8.

Conference Proceedings
Conference Proceedings
8. Unintentional hydrogenation of III-V semiconductors during device processing
Pearton,S.J. ; Abernathy,C.R. ; Hobson,W.S. ; Chakrabarti,U.K. ; Lopata,J. ; Kozuch,D.M. ; Stavola,M.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.617-622,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87