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22 results

Conference Proceedings

1. Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

S.K. Haney ; V. Misra ; D.J. Lichtenwalner ; A.K. Agarwal

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.707-710, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. 16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

L. Cheng ; A.K. Agarwal ; M. O'Loughlin ; C. Capell ; K. Lam

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.895-898, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

3. 15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors

L. Cheng ; A.K. Agarwal ; C. Capell ; M. O'Loughlin ; K. Lam

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.978-981, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

4. High-Mobility SiC MOSFETs with Chemically Modified Interfaces

D.J. Lichtenwalner ; L. Cheng ; S. Dhar ; A.K. Agarwal ; S. Allen

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.749-752, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

5. Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes

R.E. Stahlbush ; Q.C.J. Zhang ; A.K. Agarwal ; N.A. Mahadik

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.387-390, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

6. Critical Technical Issues in High Voltage SiC Power Devices

A.K. Agarwal ; A.A. Burk ; R. Callanan ; C. Capell ; M.K. Das

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.895-900, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

7. 12 kV 4H-SiC p-IGHTs with Record Low Specific On-Resistance

Q.J. Zhang ; C. Jonas ; J.J. Sumakeris ; A.K. Agarwal ; J.W. Palmour

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1187-1190, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

S. Dhar ; A.C. Ahyi ; J.R. Williams ; S.H. Ryu ; A.K. Agarwal

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.713-716, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

9. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

L. Cheng ; S.H. Ryu ; A.K. Agarwal ; M.J. O'Loughlin ; A.A. Burk

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1065-1068, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

10.

Conference Proceedings

10. 12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination

Q.J. Zhang ; A.K. Agarwal ; C. Capell ; L. Cheng ; M.J. O'Loughlin

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1151-1154, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

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Author: A.K. Agarwal