1.

Conference Proceedings
Conference Proceedings
1. Defects in Low-k Insulators: ESR Analysis and Charge Injection
V. V. Afanas'ev ; K. Keunen ; A. P. D. Nguyen ; M. Jivanescu ; A. Stesmans ; Zs. Tokei ; M. R. Baklanov ; G. P. Beyer
Pub. info.: Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A..  pp.53-60,  2012.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1335
2.

Conference Proceedings
Conference Proceedings
2. Defect Generation in High-K Dielectric Stacks: Characterization and Modelling
M. Houssa ; J. L. Autran ; V. V. Afanas'ev ; A. Stesmans ; M. M. Heyns
Pub. info.: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues.  pp.113-124,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-28
3.

Conference Proceedings
Conference Proceedings
3. Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-κ Stacks
N. Van der Heyden ; G. Pourtois ; S. De Gendt ; M. Heyns ; A. Stesmans
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.135-143,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
4.

Conference Proceedings
Conference Proceedings
4. Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO₂ vs. the Ge/HfO₂ System
A. Stesmans ; V. Afanas'ev ; K. Clemer
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.347-362,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)